L6388ED IGBT MOSFET Gate Driver ic

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The L6388E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology.
It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V.
The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.

Features
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature range
■ Driver current capability:
   – 400mA source,
   – 650mA sink
■ Switching times 70/40 nsec rise/fall with 1nF load
■ 3.3V, 5V, 15V CMOS/TTL inputs comparators with hysteresys and pull down
■ Internal bootstrap diode
■ Outputs in phase with inputs
■ Dead time and interlocking function

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