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H20R1203 20A 1200V reverse conducting IGBT TO-247
H20R1203 20A 1200V reverse conducting IGBT TO-247

H20R1203 20A 1200V Reverse Conducting IGBT, TO-247

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The H20R1203 20A 1200V IGBT is the marking for the Infineon IHW20N120R3, a high-voltage reverse-conducting IGBT designed for resonant switching and soft-switching power electronics applications. It combines an IGBT with a monolithic body diode, making it suitable for circuits where controlled high-voltage switching and reverse current conduction are required. According to the Infineon datasheet, the device is rated for 1200V collector-emitter voltage and 20A DC collector current at 100°C case temperature, with a maximum junction temperature of 175°C. The specified typical VCE(sat) is 1.48V at 25°C.

The H20R1203 uses a PG-TO247-3 / TO-247 package with Gate, Collector, and Emitter terminals, providing a practical high-power package for thermal management and power switching designs. Infineon's TRENCHSTOP technology provides low VCE(sat), high ruggedness, temperature-stable behavior, and low EMI characteristics.

This 20A 1200V IGBT transistor is particularly suited to induction cooking equipment, inverterized microwave ovens, resonant converters, and soft-switching applications. Its integrated monolithic body diode is designed specifically for soft commutation, so designers should follow the manufacturer's switching and operating conditions rather than treating it as a general-purpose freewheeling diode.

For Bangladeshi electronics students, engineers, repair technicians, and power-electronics enthusiasts, the H20R1203 can be useful when repairing or developing high-voltage switching circuits, resonant power supplies, induction heating equipment, and inverter-based systems. When replacing an existing IGBT, always verify the voltage rating, current rating, switching topology, pin configuration, package, gate-drive requirements, thermal conditions, and datasheet specifications before installation.

The manufacturer datasheet also lists a maximum gate-emitter voltage of ±20V, a pulsed collector current of 60A, and a maximum junction temperature of 175°C under the specified conditions. These values are maximum ratings, not recommended continuous operating targets.

Specifications:

SpecificationDetails
Product MarkingH20R1203
Part NumberIHW20N120R3
Device TypeReverse Conducting IGBT
TechnologyTRENCHSTOP
Collector-Emitter Voltage1200V
Collector Current20A at specified Tc condition
Typical VCE(sat)1.48V @ 25°C
Maximum Junction Temperature175°C
Gate-Emitter Voltage±20V
PackagePG-TO247-3 / TO-247
Body DiodeMonolithic body diode
Main ApplicationsResonant converters, induction cooking, soft switching
Frequently Asked Questions

H20R1203 is the device marking associated with the Infineon IHW20N120R3, a 1200V, 20A reverse-conducting IGBT with a monolithic body diode.

The collector-emitter voltage rating is 1200V.

The datasheet specifies a 20A DC collector current at Tc = 100°C and 40A at Tc = 25°C under the stated maximum-rating conditions.

Typical applications include induction cooking, inverterized microwave ovens, resonant converters, and soft-switching circuits.
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