The H20PR5, also known as the IHW20N135R5, is a Reverse Conducting Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It integrates a monolithic body diode and is optimized for resonant switching applications.

Key Specifications:

• Collector-Emitter Voltage (V_CE): 1350 V
• Continuous Collector Current (I_C): 20 A at 100°C case temperature; 40 A at 25°C
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.65 V at 25°C
• Total Power Dissipation (P_tot): 288 W at 25°C
• Operating Junction Temperature (T_vj): -40°C to 175°C
• Package: TO-247-3

Features:

• High breakdown voltage of 1350 V for enhanced reliability
• Integrated monolithic body diode with low forward voltage, designed for soft commutation
• TRENCHSTOP™ technology providing:
  • Tight parameter distribution
  • High ruggedness and temperature stability
  • Low V_CE(sat)
  • Positive temperature coefficient in V_CE(sat) for easy parallel operation
• Low Electromagnetic Interference (EMI)
• Qualified according to JESD-022 standards
• RoHS compliant and halogen-free

Applications:

• Inductive heating and cooking
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications