110N8F6 110A 80V 200W N-CHANNEL MOSFET

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The 110N8 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a high current-handling capacity of 110A and a voltage rating of 80V. This type of MOSFET is typically used in applications such as motor drivers, power converters, and high-power switching circuits.


Key Specifications

ParameterValue
Maximum Drain Current (Iₐ)110A
Drain-Source Voltage (Vₓ)80V
Maximum Power Dissipation (Pₐ)200W
Gate Threshold Voltage (Vₐ)Typically 2-4V
R<sub>DS(on)</sub> (On-State Resistance)Very low (varies by model and Vgs)
PackageTO-220 or equivalent

Features

  • High Current and Voltage Capacity: Suitable for driving heavy loads.
  • Low R<sub>DS(on)</sub>: Reduces conduction losses, making it efficient for power applications.
  • Fast Switching: Suitable for high-frequency operation.
  • Thermal Stability: Can handle significant power dissipation with appropriate heat sinking.

Applications

  • Motor Drivers: Control of DC motors or stepper motors.
  • Power Supplies: DC-DC converters, inverters, and switching regulators.
  • LED Drivers: High-current LED arrays.
  • Battery Management: In circuits requiring high current handling.
  • Switching Circuits: For switching high-power loads efficiently.

Pin Configuration (Typical for TO-220 Package)

  1. Gate (G): Control input; a voltage here switches the MOSFET on or off.
  2. Drain (D): Connected to the load.
  3. Source (S): Connected to ground or the negative terminal.

How to Use in Circuits

  1. Gate Control:

    • Use a suitable gate driver or microcontroller to provide the gate voltage.
    • A voltage above the gate threshold voltage (V<sub>gs(th)</sub>) is required to fully turn on the MOSFET.
    • For logic-level operation, ensure the MOSFET can fully switch on at the voltage provided by your controller (e.g., 5V or 3.3V).
  2. Drain-Source Circuit:

    • Connect the load between the positive voltage source and the drain.
    • Ensure the drain-source voltage and current ratings are not exceeded.
  3. Gate Resistor:

    • Include a small resistor (10-100Ω) between the control signal and the gate to limit inrush current and reduce ringing.
  4. Protection Diode:

    • For inductive loads, add a flyback diode across the load to protect the MOSFET from voltage spikes.
  5. Heat Dissipation:

    • Use a heat sink or active cooling to manage heat dissipation for high-power applications.

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